 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AO6804 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO6804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6804 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS = 20V ID = 5.0A (VGS = 4.5V) Typical Rds RDS(ON) < 24m (VGS = 4.5V) RDS(ON) < 26m (VGS = 4.0V) RDS(ON) < 28m (VGS = 3.1V) RDS(ON) < 31m (VGS = 2.5V) D1 TSOP6 Top View S1 D1/D2 S2 16 25 34 G1 D1/D2 G2 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol 10 Sec Steady State Parameter VDS Drain-Source Voltage 20 VGS 12 Gate-Source Voltage Continuous Drain 5 4 TA=25C Current A TA=70C 4 3.2 ID Pulsed Drain Current Power Dissipation A B Units V V A IDM PD TJ, TSTG 1.3 0.8 25 0.8 0.5 -55 to 150 W C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t 10s Steady State Steady State RJA RJL Typ 76 118 54 Max 95 150 68 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6804 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID = 250A, VGS = 0V VDS = 20V, VGS = 0V TJ = 55C VDS = 0V, VGS = 12V VDS = VGS ID = 250A VGS = 4.5V, VDS = 5V VGS = 4.5V, ID = 5.0A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS = 4.0V, ID = 4.5A VGS = 3.1V, ID = 4.5A VGS = 2.5V, ID = 4.0A Forward Transconductance VDS = 5V, ID = 5.0A Diode Forward Voltage IS = 1A,VGS = 0V Maximum Body-Diode Continuous Current 0.5 25 18 25 22 21 22 0.75 24 33 26 28 31 7 0.65 Min 20 1 5 500 1.2 32 43 34 37 42 1 1.1 725 Typ Max Units V A nA V A m m m m S V A pF pF gFS VSD IS DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 580 95 70 3.5 5.8 1 1.6 2.4 6.4 38 9.5 18 6 5.3 7.7 pF nC nC nC ns ns ns ns ns nC VGS= 4.5V, VDS= 10V, ID= 5A VGS=10V, VDS=10V, RL=2.0, RGEN=3 IF=5A, dI/dt=100A/s IF=5A, dI/dt=100A/s 24 A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating. Rev1 September 2007 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6804 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 15 ID (A) VGS=1.8V 10 5 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 34 Normalized On-Resistance 32 RDS(ON) (m) 30 VGS= 3.1V 28 VGS= 4.0V 26 VGS= 4.5V 24 22 0 2 4 VGS= 2.5V 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 ID= 5.0A 50 RDS(ON) (m) 40 125C 1E+00 1E-01 IS (A) 1E-02 125C VGS= 4.5V ID= 5A ID(A) 14 4.5V 3V 2.5V 2V 12 10 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2 VGS(Volts) Figure 2: Transfer Characteristics 125C 25C VDS= 5V -40C I6=-6.5A, 8 dI/dt=100A/s 10 F ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 1E-03 25C 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25C SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARIS COMPONENTS IN LIFE SUPPORT DEVICES OR 1E-04 OUT OF20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, -40C 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. -40C 1E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5 6 7 8 9 10 VSD (Volts) VGS (Volts) Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6804 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 1 2 3 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics VDS= 10V ID= 5A 1000 800 Capacitance (pF) Ciss 600 400 200 Crss 0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics Coss 100 1000 TJ(Max)=150C TA=25C 10 ID (Amps) 10s 100 Power (W) 100s 1 RDS(ON) limited TJ(Max)=150C TA=25C 0.01 0.1 1 1ms 10ms 100ms DC 10s 10 0.1 1 IF=-6.5A, dI/dt=100A/s 10 100 VDS (Volts) 0.1 0.00001 0.001 0.1 10 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=118C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARIS OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
Price & Availability of AO6804
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |